c i r c u i t o u t l i n e d r a w i n g dimnsion:mm a x i m u m r a t i n g s ?R grade ? parameter ? symbol pdt pdh pch pat PAH15016 g unit ??R repetitive peak off-state voltage v drm 1600 v ???R non repetitive peak off-state voltage v dsm 1700 v ??R repetitive peak reverse voltage v rrm 1600 v ???R non repetitive peak reverse voltage v rsm 1700 v ? parameter ? symbol conditions max.rated value g unit ? average on-state current io (av) ? 180 ? tc =73 half sine wave 150 a g rms on-state current i t(rms) 235 a surge on-state current i tsm 50hz ?? 1 ???? half sine wave, 1p ulse, non-repetitive 3200 a \rge i squared t i 2 t 2 10ms 51200 a 2 R?N critical rate of rise of turned-on current di/dt v d = 2/3 v drm , i tm = 2 io, tj =125 i g = 300ma, di g /dt = 0.2a/ s 100 a/ s p? peak gate power p gm 5 w ?p? average gate power p g(av) 1 w peak gate current i gm 2 a ?R peak gate voltage v gm 10 v ?R peak gate reverse voltage v rgm 5 v ??? operating junction temperature range tjw -40 +125 ?? storage temperature range tstg -40 +125 ~F?R isolation voltage viso ?g ac 1 g terminal to base, ac 1min. 2500 v ? mounting ?????T greased m6 2.5 3.5 n m ?? mounting torque ? terminal m8 9.0 10.0 n m pd t1 501 6 pd h15 016 pch150 16 pa t15 016 pah150 16 1 5 0 v g 1 6 0 0 o l t s
yyy 1 b s b n f u f s g? 4 z n c p m yyye $ p o e j u j p o t ? q?7g . b y j n v n 7 b m v f o? 6 o j u e??|??v 1 f b l 0 g g 4 u b u f $ v s s f o u * % . 5 k ?| 7 % . 7 % 3 . n " ?>$? qy & |